Intel has announced that the first two High Numerical Aperture (High-NA EUV) extreme ultraviolet lithography machines from ASML have been successfully deployed in its manufacturing facilities. Preliminary data indicates these advanced machines demonstrate significant improvements in both efficiency and reliability compared to the previous generation of EUV lithography systems.
According to Steve Carson, Intel Senior Principal Engineer, the company has already utilized these cutting-edge lithography machines to produce 30,000 wafers within a single quarter. These wafers will yield thousands of computational processors for the market.
The implementation of High-NA EUV technology represents a critical advancement in semiconductor manufacturing capabilities, potentially enabling Intel to develop more sophisticated chip designs with enhanced performance characteristics at increasingly smaller process nodes.
Intel has announced that the two High-NA EUV lithography machines now operating in its facilities represent the most advanced semiconductor manufacturing technology in the world. These cutting-edge systems from ASML enable the production of smaller, faster computational chips compared to previous lithography generations.
Last year, Intel became the first chip manufacturer globally to receive these advanced lithography machines. This development marks a strategic shift for the company, which had previously fallen behind competitors in adopting the earlier generation of extreme ultraviolet (EUV) lithography technology.
Intel's implementation of the previous-generation EUV systems took seven years to reach full production capacity—a delay that allowed TSMC to surpass Intel's technological lead in the industry. During early production phases, Intel encountered significant setbacks due to reliability issues with those earlier EUV models.
However, according to Steve Carson, ASML's High-NA EUV lithography machines have demonstrated approximately twice the reliability of the previous generation during preliminary testing. "We're able to produce wafers at a consistent rate, which is tremendously helpful for platform stability," Carson explained.
Additionally, the new lithography systems complete the same manufacturing processes as earlier equipment with fewer exposure cycles, resulting in substantial time and cost savings. Early results from Intel's fabrication facilities indicate that the High-NA EUV lithography machines can accomplish with just one exposure and single-digit processing steps what previously required three exposures and approximately 40 processing steps on earlier machines.
This technological advancement positions Intel to potentially reclaim its manufacturing leadership as it continues to implement its IDM 2.0 strategy focused on advanced semiconductor fabrication capabilities.
In February of last year, ASML publicly showcased its latest generation High-NA EUV lithography system to media representatives at the company's headquarters in the Netherlands.
The scale of this advanced manufacturing equipment is remarkable. Each High-NA EUV lithography system is comparable in size to a double-decker bus and weighs approximately 150 tons. When fully assembled, the machine exceeds the dimensions of a large truck. Due to its extraordinary size and complexity, the system must be transported in 250 separate crates.
The installation process for these sophisticated lithography systems is equally impressive, requiring a team of 250 specialized engineers and approximately six months to complete. This extensive deployment timeline reflects the unprecedented precision engineering involved in establishing these advanced semiconductor manufacturing tools.
Intel's early adoption and successful implementation of this technology represents a significant achievement in the company's manufacturing roadmap as it works to regain its competitive position in advanced semiconductor fabrication.
According to industry sources, each High-NA EUV lithography machine commands a price tag of approximately €350 million (roughly $380 million or ¥2.7 billion). These advanced systems will become essential tools for the world's three major wafer manufacturers to achieve mass production capabilities at process nodes below 2nm.
In December 2023, Intel became the first company worldwide to receive a High-NA EUV lithography system. By comparison, TSMC and Samsung, which have also placed orders for these advanced systems, are not expected to receive their machines until 2026 at the earliest.
Technical specifications reveal that the numerical aperture (NA) is a critical parameter in lithography systems' optical configurations. This value directly determines the practical resolution capabilities and the most advanced process nodes achievable with the equipment.
Generally, when metal spacing decreases below 30nm—corresponding to process nodes beyond 5nm—lower numerical aperture lithography systems reach their resolution limits. At this point, manufacturers must resort to techniques such as EUV double exposure or pattern shaping to achieve the required precision. These workarounds significantly increase production costs and typically reduce yield rates, making higher numerical aperture systems increasingly necessary for advanced semiconductor manufacturing.
Intel has announced plans to utilize these High-NA EUV lithography systems in the development of its 18A process technology, which is scheduled to enter mass production later this year with the company's next generation of PC processors. Additionally, Intel intends to fully implement these advanced lithography systems in its subsequent 14A process technology, though the mass production timeline for this node has not yet been disclosed.
This strategic investment in cutting-edge lithography technology demonstrates Intel's commitment to regaining its manufacturing leadership position in the highly competitive semiconductor industry.
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