Micron Introduces 1γnm DDR5 Memory: First EUV Implementation Enables 128GB/9200MHz Performance

 

Micron Technology has announced that its DDR5 DRAM memory chips based on the latest 1γ (1-gamma) nanometer process technology have entered production. This new generation of memory delivers significant improvements across performance, energy efficiency, and density metrics.

In the DRAM memory industry, process nodes traditionally do not use specific numerical values in their naming conventions. Instead, manufacturers employ an iterative sequence designated as 1a, 1b, 1c, 1α (1-alpha), 1β (1-beta), and 1γ (1-gamma), with each progression representing more advanced technology. For context, the 1a node is roughly equivalent to 20nm, while the new 1γ node approaches 10nm in scale.

Micron Implements EUV Lithography with Its 1γnm Process Technology

Micron's latest memory advancement marks the company's first implementation of Extreme Ultraviolet (EUV) lithography in its manufacturing process. While competitors Samsung and SK Hynix adopted this technology earlier, Micron has taken a comprehensive approach by simultaneously introducing next-generation High-K Metal Gate (HKMG) technology and new Back-End-Of-Line (BEOL) processes.

The company has not disclosed the specific number of EUV lithography layers utilized in production. Industry analysts speculate that Micron is currently applying EUV selectively to critical layers rather than comprehensively, as full implementation would require multiple exposures, significantly increasing both production time and manufacturing costs.

The new 1γ DDR5 memory chips feature a capacity of 16Gb (2GB) per die, enabling the straightforward production of enterprise-grade memory modules with capacities up to 128GB per stick. Micron reports that the density of these chips has increased by 30% compared to the previous 1β generation—consistent with the typical density improvements observed with each process node advancement.

Micron Achieves 9200MHz at Standard Voltage with New 1γnm DDR5 Memory

The impressive technological advancements in Micron's new memory chips extend beyond capacity improvements. These 1γ DDR5 modules can achieve an extraordinary frequency of 9200MHz (technically 9200MT/s) while operating at the standard voltage of just 1.1V.

This achievement stands in stark contrast to current high-frequency memory modules available on the market, which typically require elevated voltages of 1.35V or even 1.45V to reach comparable speeds.

The ability to operate at lower voltages delivers dual benefits: enhanced system safety and reduced power consumption. According to Micron, these new modules can decrease power consumption by up to 20% compared to previous 1β process technology products. This efficiency improvement makes the new memory particularly attractive for enterprise data centers and high-performance computing applications where power efficiency directly impacts operational costs.

Micron Plans Gradual Production Expansion of 1γnm DDR5 Memory

Currently, Micron is manufacturing its 1γ DDR5 memory exclusively at its facilities in Japan. The company plans to gradually increase production capacity, with related products expected to reach the market around mid-2025.

Looking ahead, Micron will also introduce EUV lithography technology at its Taiwan factories. These facilities will utilize the 1γ process to manufacture GDDR7 graphics memory and high-frequency LPDDR5X memory, with the latter capable of reaching speeds up to 9600MHz.

This strategic manufacturing expansion reflects Micron's commitment to advancing memory technology across multiple product categories, positioning the company to meet growing demand for high-performance memory solutions in various computing segments.